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EUR50.40
EUR87.40

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LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 LE4-116-DD1 dieses bewährte Modul zu einem

SKU: 33080941477

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Description

dieses bewährte Modul zu einem attraktiven Preis zu erwerben

Discover the FJ39 Fer Servostar Kollmorgen 403a-C S403A-CA 3A

Optimized energy efficiency: With a operating range of 22-26V and a power consumption of only 250mA

die Wert auf Präzision und Leistung legen

LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 LE4-116-DD1 dieses bewährte Modul zu einemThe LK2960 Insulated Gate Bipolar Transistor (IGBT) from Toshiba, Model MG200J2YS45, is an excellent choice for industrial applications that require reliable performance and efficiency. This IGBT used comes from a device dismantling and was in operation until it was expanded, which underlines its quality and functionality. High performance: Designed for high electricity and voltage applications, this IGBT offers optimal performance parameters.

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