FDP33N25 Transistor - N-MOSFET, 250V 20,4A 235W (TO220) ELGPIM 11082026 12.33 DC contacts rating (at resistance

DC contacts rating (at resistance load): 5A / 30VDC

Operationel temperatur: -30 til +50°C

hvordan rød og nær-infrarød lysbehandling fungerer samt fordelene ved denne form for terapi

Klingediameter: Ø2

FDP33N25 Transistor - N-MOSFET, 250V 20,4A 235W (TO220) ELGPIM 11082026 12.33 DC contacts rating (at resistanceTekniske detaljer: Producent (varemrke): ONSEMI Transistortype: N MOSFET Polarisering: Unipolr Drain source spnding (VDS): 250V Kontinuerlig drnstrm (ID): 20,4A Puls drnstrm: 132A Effektafledning (PD): 235W Hus: TO220AB Gate source spnding (VGS): 30V On state modstand (RDS(on)): 94 mOhm Montering: Printhul Portladning: 48nC Type kanal: Forstrket Specifications: Manufacturer: ONSEMI Type of transistor: N MOSFET Polarisation: Unipolar Drain source